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2018 An improved upper bound for the critical value of the contact process on $\mathbb{Z} ^d$ with $d\geq 3$
Xiaofeng Xue
Electron. Commun. Probab. 23: 1-11 (2018). DOI: 10.1214/18-ECP177

Abstract

By coupling the basic contact process with a linear system, we give an improved upper bound for the critical value $\lambda _c$ of the basic contact process on the lattice $\mathbb{Z} ^d$ with $d\geq 3$. As a direct corollary of our result, the critical value of the three-dimensional contact process is shown to be at most $0.34$.

Citation

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Xiaofeng Xue. "An improved upper bound for the critical value of the contact process on $\mathbb{Z} ^d$ with $d\geq 3$." Electron. Commun. Probab. 23 1 - 11, 2018. https://doi.org/10.1214/18-ECP177

Information

Received: 8 February 2018; Accepted: 4 October 2018; Published: 2018
First available in Project Euclid: 19 October 2018

zbMATH: 1401.60180
MathSciNet: MR3873784
Digital Object Identifier: 10.1214/18-ECP177

Subjects:
Primary: 60K35

Keywords: contact process , critical value , linear system , upper bound

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